YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 930

• Manufacturer Part Number: YR0K42378FC000BA
• Description: KIT EVAL FOR H8S/2378
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of YR0K42378FC000BA

• Contents: Board
• For Use With/related Products: H8S/2378
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Section 21 Flash Memory (0.18-μm F-ZTAT Version)
• Programming/erasing time
• Number of programming
• Three on-board programming modes and one off-board programming mode
• One off-board programming mode
• Programming/erase protection
Rev.7.00 Mar. 18, 2009 page 862 of 1136
REJ09B0109-0700
The flash memory programming time is 1 ms (typ) in 128-byte simultaneous programming and
8 µs per byte. The erasing time is 750 ms (typ) per 64-kbyte block.
⎯ User branch
The number of flash memory programming can be up to 100 times.
⎯ Boot mode
⎯ User program mode
⎯ User boot mode
⎯ PROM mode
There are three types of flash memory programming/erase protection that may be selected:
hardware protection, software protection, and error protection.
The program processing is performed in 128-byte units. It consists the program pulse
application, verify read, and several other steps. Erasing is performed in one divided-block
units and consists of several steps. The user processing routine can be executed between
the steps, this setting for which is called the use branch addition.
This mode is a program mode that uses an on-chip SCI interface. The user MAT and user
boot MAT can be programmed. This mode can automatically adjust the bit rate between
host and this LSI.
The user MAT can be programmed by using the optional interface.
The user boot program of the optional interface can be made and the user MAT can be
programmed.
This mode uses the PROM programmer. The user MAT and user boot MAT can be
programmed.