YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 264

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YR0K42378FC000BA

Manufacturer Part Number
YR0K42378FC000BA
Description
KIT EVAL FOR H8S/2378
Manufacturer
Renesas Electronics America
Series
H8®r
Type
MCUr
Datasheet

Specifications of YR0K42378FC000BA

Contents
Board
For Use With/related Products
H8S/2378
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Section 6 Bus Controller (BSC)
6.6.7
If the RAST bit is set to 1 in DRAMCR, the RAS signal goes low from the beginning of the T
state, and the row address hold time and DRAM read access time are changed relative to the fall of
the RAS signal. Use the optimum setting according to the DRAM connected and the operating
frequency of this LSI. Figure 6.23 shows an example of the timing when the RAS signal goes low
from the beginning of the T
Rev.7.00 Mar. 18, 2009 page 196 of 1136
REJ09B0109-0700
Read
Write
Note: n = 2 to 5
Figure 6.23 Example of Access Timing when RAS Signal Goes Low from Beginning
Row Address Output State Control
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
r
state.
T
of T
p
Row address
r
State (CAST = 0)
T
r
High
High
T
c1
Column address
T
c2
r

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