YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 925

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YR0K42378FC000BA

Manufacturer Part Number
YR0K42378FC000BA
Description
KIT EVAL FOR H8S/2378
Manufacturer
Renesas Electronics America
Series
H8®r
Type
MCUr
Datasheet

Specifications of YR0K42378FC000BA

Contents
Board
For Use With/related Products
H8S/2378
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
6. Do not perform additional programming. Erase the memory before reprogramming.
7. Before programming, check that the chip is correctly mounted in the PROM programmer.
8. Do not touch the socket adapter or chip during programming.
9. Apply the reset signal after the SWE, bit is cleared during its operation.
In on-board programming, perform only one programming operation on a 128-byte
programming unit block. In programmer mode, too, perform only one programming operation
on a 128-byte programming unit block. Programming should be carried out with the entire
programming unit block erased.
Overcurrent damage to the device can result if the index marks on the PROM programmer
socket, socket adapter, and chip are not correctly aligned.
Touching either of these can cause contact faults and write errors.
The reset signal is applied at least 100 µs after the SWE bit has been cleared.
Section 20 Flash Memory (0.35-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 857 of 1136
REJ09B0109-0700

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