YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 905

• Manufacturer Part Number: YR0K42378FC000BA
• Description: KIT EVAL FOR H8S/2378
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of YR0K42378FC000BA

• Contents: Board
• For Use With/related Products: H8S/2378
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1. Initial state
3. Flash memory initialization
(1) the program that will transfer the
programming/ erase control program to on-chip
RAM should be written into the flash memory by
the user beforehand. (2) The programming/erase
control program should be prepared in the host
or in the flash memory.
The programming/erase program in RAM is
executed, and the flash memory is initialized (to
H'FF). Erasing can be performed in block units,
but not in byte units.
This LSI
This LSI
Application program
Transfer program
Transfer program
Flash memory
Flash memory
Flash memory
Boot program
Boot program
(old version)
erase
erase control program
New application
New application
Programming/
program
program
Host
Host
erase control program
Programming/
Figure 20.4 User Program Mode
RAM
RAM
SCI
SCI
Section 20 Flash Memory (0.35-μm F-ZTAT Version)
2. Programming/erase control program transfer
4. Writing new application program
This LSI
This LSI
When user program mode is entered, user
software confirms this fact, executes the transfer
program in the flash memory, and transfers the
programming/erase control program to RAM.
Next, the new application program in the host is
written into the erased flash memory blocks. Do
not write to unerased blocks.
Rev.7.00 Mar. 18, 2009 page 837 of 1136
Application program
Transfer program
New application
Transfer program
Flash memory
Flash memory
Boot program
Boot program
(old version)
program
New application
program
Host
Host
erase control program
erase control program
Programming/
Programming/
Program execution state
RAM
RAM
REJ09B0109-0700
SCI
SCI