YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 917

• Manufacturer Part Number: YR0K42378FC000BA
• Description: KIT EVAL FOR H8S/2378
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of YR0K42378FC000BA

• Contents: Board
• For Use With/related Products: H8S/2378
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 20.6 System Clock Frequencies for which Automatic Adjustment of LSI Bit Rate Is
Host Bit Rate
19,200 bps
9,600 bps
20.6.2
On-board programming/erasing of an individual flash memory block can also be performed in user
program mode by branching to a user program/erase program. The user must set branching
conditions and provide on-board means of supplying programming data. The flash memory must
contain the program/erase program or a program which provides the program/erase program from
external memory. Because the flash memory itself cannot be read during programming/erasing,
transfer the program/erase program to on-chip RAM, as like in boot mode. Figure 20.6 shows a
sample procedure for programming/erasing in user program mode. Prepare a program/erase
program in accordance with the description in section 20.7, Flash Memory Programming/Erasing.
Figure 20.6 Programming/Erasing Flowchart Example in User Program Mode
User Program Mode
Possible
program (flash memory programming)
Branch to user program/erase control
Transfer user program/erase control
Execute user program/erase control
Branch to flash memory application
program to RAM
program in RAM
Program/erase?
Reset-start
program
System Clock Frequency Range of LSI
8 to 25 MHz
8 to 25 MHz
Yes
No
Section 20 Flash Memory (0.35-μm F-ZTAT Version)
Branch to flash memory application
Rev.7.00 Mar. 18, 2009 page 849 of 1136
program
REJ09B0109-0700