YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 275
YR0K42378FC000BA
Manufacturer Part Number
YR0K42378FC000BA
Description
KIT EVAL FOR H8S/2378
Manufacturer
Renesas Electronics America
Series
H8®r
Type
MCUr
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of YR0K42378FC000BA
Contents
Board
For Use With/related Products
H8S/2378
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
- Current page: 275 of 1208
- Download datasheet (8Mb)
• RAS Up Mode
φ
Address bus
RASn (CSn)
UCAS, LCAS
RD
OE
Data bus
Note: n = 2 to 5
To select RAS up mode, clear the RCDM bit to 0 in DRAMCR. Each time access to DRAM
space is interrupted and another space is accessed, the RAS signal goes high again. Burst
operation is only performed if DRAM space is continuous. Figure 6.33 shows an example of
the timing in RAS up mode.
Figure 6.33 Example of Operation Timing in RAS Up Mode
T
Row address
p
DRAM space read
T
r
(RAST = 0, CAST = 0)
Column address 1 Column address 2
T
c1
T
c2
Rev.7.00 Mar. 18, 2009 page 207 of 1136
T
DRAM space
c1
read
Section 6 Bus Controller (BSC)
T
c2
External address
Normal space
T
1
REJ09B0109-0700
read
T
2
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