YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 929

• Manufacturer Part Number: YR0K42378FC000BA
• Description: KIT EVAL FOR H8S/2378
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of YR0K42378FC000BA

• Contents: Board
• For Use With/related Products: H8S/2378
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

The flash memory has the following features. Figure 21.1 shows a block diagram of the flash
memory.
21.1
• Size
• Two flash-memory MATs according to LSI initiation mode
• Programming/erasing interface by the download of on-chip program
Product Classification
H8S/2370R
The on-chip flash memory has two memory spaces in the same address space (hereafter
referred to as memory MATs). The mode setting in the initiation determines which memory
MAT is initiated first. The MAT can be switched by using the bank-switching method after
initiation.
⎯ The user memory MAT is initiated at a power-on reset in user mode: 256 kbytes/
⎯ The user boot memory MAT is initiated at a power-on reset in user boot mode: 8 kbytes
This LSI has a dedicated programming/erasing program. After downloading this program to
the on-chip RAM, programming/erasing can be performed by setting the argument parameter.
The user branch is also supported.
H8S/2378
H8S/2378R
H8S/2374
H8S/2374R
H8S/2372
H8S/2372R
H8S/2371
H8S/2371R
H8S/2370
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
384 kbytes/512 kbytes
Features
HD64F2370R
HD64F2378B
HD64F2378R
HD64F2374
HD64F2374R
HD64F2372
HD64F2372R
HD64F2371
HD64F2371R
HD64F2370
ROM Size
512 kbytes
384 kbytes
256 kbytes
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 861 of 1136
ROM Address
H'000000 to H'07FFFF
H'000000 to H'05FFFF
H'000000 to H'03FFFF
(Modes 3 to 5 and 7)
(Modes 3 to 5 and 7)
(Modes 3 to 5 and 7)
REJ09B0109-0700