YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 232

• Manufacturer Part Number: YR0K42378FC000BA
• Description: KIT EVAL FOR H8S/2378
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of YR0K42378FC000BA

• Contents: Board
• For Use With/related Products: H8S/2378
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Section 6 Bus Controller (BSC)
6.3.9
DRACCR is used to set the DRAM/synchronous DRAM interface bus specifications.
Note: The synchronous DRAM interface is not supported by the H8S/2378 Group.
Bit
15
14
13
12
11
Rev.7.00 Mar. 18, 2009 page 164 of 1136
REJ09B0109-0700
Bit Name
DRMI
—
TPC1
TPC0
SDWCD
DRAM Access Control Register (DRACCR)
Initial Value
0
0
0
0
0 *
R/W
R/W
R/W
R/W
R/W
R/W
Description
Idle Cycle Insertion
An idle cycle can be inserted after a
DRAM/synchronous DRAM access cycle when a
continuous normal space access cycle follows a
DRAM/synchronous DRAM access cycle. Idle cycle
insertion conditions, setting of number of states,
etc., comply with settings of bits ICIS2, ICIS1,
ICIS0, and IDLC in BCR register
0: Idle cycle not inserted
1: Idle cycle inserted
Reserved
This bit can be read from or written to. However,
the write value should always be 0.
Precharge State Control
These bits select the number of states in the RAS
precharge cycle in normal access and refreshing.
00: 1 state
01: 2 states
10: 3 states
11: 4 states
CAS Latency Control Cycle Disabled during
Continuous Synchronous DRAM Space Write
Access
Disables CAS latency control cycle (Tcl) inserted
by WTCRB (H) settings during synchronous DRAM
write access (see figure 6.5).
0: Enables CAS latency control cycle
1: Disables CAS latency control cycle