YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 276

• Manufacturer Part Number: YR0K42378FC000BA
• Description: KIT EVAL FOR H8S/2378
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of YR0K42378FC000BA

• Contents: Board
• For Use With/related Products: H8S/2378
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Section 6 Bus Controller (BSC)
6.6.12
This LSI is provided with a DRAM refresh control function. CAS-before-RAS (CBR) refreshing
is used. In addition, self-refreshing can be executed when the chip enters the software standby
state.
Refresh control is enabled when any area is designated as DRAM space in accordance with the
setting of bits RMTS2 to RMTS0 in DRAMCR.
CAS-before-RAS (CBR) Refreshing: To select CBR refreshing, set the RFSHE bit to 1 in
REFCR.
With CBR refreshing, RTCNT counts up using the input clock selected by bits RTCK2 to RTCK0
in REFCR, and when the count matches the value set in RTCOR (compare match), refresh control
is performed. At the same time, RTCNT is reset and starts counting up again from H'00.
Refreshing is thus repeated at fixed intervals determined by RTCOR and bits RTCK2 to RTCK0.
Set a value in RTCOR and bits RTCK2 to RTCK0 that will meet the refreshing interval
specification for the DRAM used.
When bits RTCK2 to RTCK0 in REFCR are set, RTCNT starts counting up. RTCNT and RTCOR
settings should therefore be completed before setting bits RTCK2 to RTCK0. RTCNT operation is
shown in figure 6.34, compare match timing in figure 6.35, and CBR refresh timing in figure 6.36.
When the CBRM bit in REFCR is cleared to 0, access to external space other than DRAM space is
performed in parallel during the CBR refresh period.
Rev.7.00 Mar. 18, 2009 page 208 of 1136
REJ09B0109-0700
RTCOR
H'00
Refresh request
Refresh Control
RTCNT
Figure 6.34 RTCNT Operation