YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 955

• Manufacturer Part Number: YR0K42378FC000BA
• Description: KIT EVAL FOR H8S/2378
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of YR0K42378FC000BA

• Contents: Board
• For Use With/related Products: H8S/2378
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Bit
2
1
0
(4)
When flash memory is erased, the erase-block number on the user MAT must be passed to the
erasing program which is downloaded. This is set to the FEBS parameter (general register ER0).
One block is specified from the block number 0 to 15.
For details on the erasing processing procedure, see section 21.4.2, User Program Mode.
Erasure Execution
Bit
Name
WD
WA
SF
Initial
Value
⎯
⎯
⎯
R/W
R/W
R/W
R/W
Description
Write Data Address Detect
When the address in the flash memory area is specified
as the start address of the storage destination of the
program data, an error occurs.
0: Setting of write data address is normal
1: Setting of write data address is abnormal
Write Address Error Detect
When the following items are specified as the start
address of the programming destination, an error occurs.
•
•
0: Setting of programming destination address is normal
1: Setting of programming destination address is
Success/Fail
Indicates whether the program processing is ended
normally or not.
0: Programming is ended normally (no error)
1: Programming is ended abnormally (error occurs)
abnormal
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
When the programming destination address in the
area other than flash memory is specified
When the specified address is not a 128-byte
boundary (the value of A6 to A0 is not H'0).
Rev.7.00 Mar. 18, 2009 page 887 of 1136
REJ09B0109-0700