YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 333
YR0K42378FC000BA
Manufacturer Part Number
YR0K42378FC000BA
Description
KIT EVAL FOR H8S/2378
Manufacturer
Renesas Electronics America
Series
H8®r
Type
MCUr
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of YR0K42378FC000BA
Contents
Board
For Use With/related Products
H8S/2378
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
- Current page: 333 of 1208
- Download datasheet (8Mb)
Previous Access
Note:
Setting the DRMI bit in DRACCR to 1 enables an idle cycle to be inserted in the case of
consecutive read and write operations in DRAM/continuous synchronous DRAM space burst
access. Figures 6.81 and 6.82 show an example of the timing for idle cycle insertion in the case of
consecutive read and write accesses to DRAM/continuous synchronous DRAM space.
Normal space write
DRAM/continuous
synchronous DRAM *
space write
* Not supported by the H8S/2378 Group.
Next Access
Normal space read
DRAM * /continuous
synchronous DRAM
space read
Normal space read
DRAM * /continuous
synchronous DRAM
space read
ICIS2
0
1
0
1
0
1
0
1
ICIS1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Rev.7.00 Mar. 18, 2009 page 265 of 1136
ICIS0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Section 6 Bus Controller (BSC)
DRMI
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
IDLC
⎯
0
1
⎯
0
1
⎯
0
1
⎯
0
1
REJ09B0109-0700
Idle cycle
Disabled
1 state inserted
2 states inserted
Disabled
1 state inserted
2 states inserted
Disabled
1 state inserted
2 states inserted
Disabled
1 state inserted
2 states inserted
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