YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 962
YR0K42378FC000BA
Manufacturer Part Number
YR0K42378FC000BA
Description
KIT EVAL FOR H8S/2378
Manufacturer
Renesas Electronics America
Series
H8®r
Type
MCUr
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of YR0K42378FC000BA
Contents
Board
For Use With/related Products
H8S/2378
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
- Current page: 962 of 1208
- Download datasheet (8Mb)
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
Note that memory read of the user MAT/user boot MAT can only read the programmed data after
all user MAT/user boot MAT has automatically been erased.
Rev.7.00 Mar. 18, 2009 page 894 of 1136
REJ09B0109-0700
⎯ There are many commands other than programming/erasing. Examples are sum check,
programming/erasing command. The erasure must be used when the specified block is
programmed without a reset start after programming is executed in boot mode. When
programming can be executed by only one operation, all blocks are erased before the state
for waiting programming/erasing/other command is entered. The erasing operation is not
required.
blank check (erasure check), and memory read of the user MAT/user boot MAT and
acquisition of current status information.
(Program end notice)
2
4
Figure 21.8 Overview of Boot Mode State Transition Diagram
Wait for program data
programming/erasing
(reset by boot mode)
Boot mode initiation
setting command
Wait for inquiry
3
command
Wait for
user boot MAT erasure
(Program command reception)
(Erasure end selection
command reception)
All user MAT and
(Program data transmission)
H'00.......H'00 reception
Inquiry command response
(Bit rate adjustment)
Inquiry command reception
Read/check command
reception
H'00 transmission
(adjustment completed)
Command response
(Erasure selection command reception)
read/check command
Bit rate adjustment
Wait for erase-block
Processing of
inquiry setting
Processing of
command
data
(Erase-block specification)
1
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