YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 313

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YR0K42378FC000BA

Manufacturer Part Number
YR0K42378FC000BA
Description
KIT EVAL FOR H8S/2378
Manufacturer
Renesas Electronics America
Series
H8®r
Type
MCUr
Datasheet

Specifications of YR0K42378FC000BA

Contents
Board
For Use With/related Products
H8S/2378
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
(2) Read Data Extension
If the CKSPE bit is set to 1 in DRACCR when the continuous synchronous DRAM space is read-
accessed in DMAC/EXDMAC single address mode, the establishment time for the read data can
be extended by clock suspend mode. The number of states for insertion of the read data extension
cycle (Tsp) is set in bits RDXC1 and RDXC0 in DRACCR. Be sure to set the OEE bit to 1 in
DRAMCR when the read data will be extended. The extension of the read data is not in
accordance with the bits DDS and EDDS.
Figure 6.62 shows the timing chart when the read data is extended by two cycles.
Figure 6.62 Example of Timing when the Read Data Is Extended by Two States
(DDS = 1, or EDDS = 1, RDXC1 = 0, RDXC0 = 1, CAS Latency 2)
DACK or EDACK
Precharge-sel
DQMU, DQML
Address bus
SDRAMφ
Data bus
CKE
CAS
RAS
WE
φ
PALL ACTV
address
Column
T
p
address
address
Row
Row
T
r
READ
T
c1
Rev.7.00 Mar. 18, 2009 page 245 of 1136
T
cl
NOP
T
c2
Column address
Section 6 Bus Controller (BSC)
T
sp1
T
sp2
REJ09B0109-0700

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