MC9S08QG8CDTE Freescale Semiconductor, MC9S08QG8CDTE Datasheet - Page 51

• Manufacturer Part Number: MC9S08QG8CDTE
• Description: IC MCU 8K FLASH 10MHZ 16-TSSOP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QG8CDTE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 12
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-TSSOP
• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 20MHz
• Interface Type: I2C/SCI/SPI
• Total Internal Ram Size: 512Byte
• # I/os (max): 12
• Number Of Timers - General Purpose: 1
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 16
• Package Type: TSSOP
• Processor Series: S08QG
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 12
• Number Of Timers: 1
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08QG8E
• Minimum Operating Temperature: - 40 C
• Package: 16TSSOP
• Family Name: HCS08
• Maximum Speed: 20 MHz
• For Use With: DEMO9S08QG8E - BOARD DEMO FOR MC9S08QG8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

4.5.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if these two conditions are met:
Freescale Semiconductor
•
•
The next burst program command has been queued before the current program operation has
completed.
The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
FLASH PROGRAM AND
ERASE FLOW
Figure 4-2. FLASH Program and Erase Flowchart
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 5
0
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
AND CLEAR FCBEF (Note 2)
WRITE TO FCDIV (Note 1)
TO LAUNCH COMMAND
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FPVIOL OR
FACCERR ?
FCCF ?
START
DONE
1
NO
1
YES
0
Note 2: Wait at least four bus cycles
Note 1: Required only once after reset.
Chapter 4 Memory Map and Register Definition
ERROR EXIT
before checking FCBEF or FCCF.
49