C8051F988-GM Silicon Laboratories Inc, C8051F988-GM Datasheet - Page 150

• Manufacturer Part Number: C8051F988-GM
• Description: IC MCU 8BIT 4KB FLASH 24QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F9xxr

Specifications of C8051F988-GM

• Program Memory Type: FLASH
• Program Memory Size: 4KB (4K x 8)
• Package / Case: 24-UQFN Exposed Pad, 24-HUQFN
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 17
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: C8051F9x
• Core: 8051
• Data Ram Size: 512 B
• Interface Type: I2C, SMBus, Enhanced UART, Enhanced SPI
• Maximum Clock Frequency: 7 KHz
• Number Of Programmable I/os: 17
• Number Of Timers: 4
• Operating Supply Voltage: 2.4 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F996DK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 10 Channel
• On-chip Dac: 10 bit, 4 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1959-5

C8051F99x-C8051F98x
14.1.2. Flash Erase Procedure
The Flash memory is organized in 512-byte pages. The erase operation applies to an entire page (setting
all bytes in the page to 0xFF). To erase an entire Flash page, perform the following steps:
1. Save current interrupt state and disable interrupts.
2. Set the PSEE bit (register PSCTL).
3. Set the PSWE bit (register PSCTL).
4. Write the first key code to FLKEY: 0xA5.
5. Write the second key code to FLKEY: 0xF1.
6. Using the MOVX instruction, write a data byte to any location within the page to be erased.
7. Clear the PSWE and PSEE bits.
8. Restore previous interrupt state.
Steps 4–6 must be repeated for each 512-byte page to be erased.
Notes:
14.1.3. Flash Write Procedure
A write to Flash memory can clear bits to logic 0 but cannot set them; only an erase operation can set bits
to logic 1 in Flash. A byte location to be programmed should be erased before a new value is written.
The recommended procedure for writing a single byte in Flash is as follows:
1. Save current interrupt state and disable interrupts.
2. Ensure that the Flash byte has been erased (has a value of 0xFF).
3. Set the PSWE bit (register PSCTL).
4. Clear the PSEE bit (register PSCTL).
5. Write the first key code to FLKEY: 0xA5.
6. Write the second key code to FLKEY: 0xF1.
7. Using the MOVX instruction, write a single data byte to the desired location within the 1024-byte sector.
8. Clear the PSWE bit.
9. Restore previous interrupt state.
Steps 5–7 must be repeated for each byte to be written.
Notes:
14.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. MOVX read instructions always target XRAM.
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1. Flash security settings may prevent erasure of some Flash pages, such as the reserved area and the page
2. 8-bit MOVX instructions cannot be used to erase or write to Flash memory at addresses higher than 0x00FF.
1. Flash security settings may prevent writes to some areas of Flash, such as the reserved area. For a summary
2. 8-bit MOVX instructions cannot be used to erase or write to Flash memory at addresses higher than 0x00FF.
containing the lock bytes. For a summary of Flash security settings and restrictions affecting Flash erase
operations, please see Section “14.3. Security Options” on page 151.
of Flash security settings and restrictions affecting Flash write operations, please see Section “14.3. Security
Options” on page 151.
Rev. 1.0