C8051F988-GM Silicon Laboratories Inc, C8051F988-GM Datasheet - Page 47

IC MCU 8BIT 4KB FLASH 24QFN

C8051F988-GM

Manufacturer Part Number
C8051F988-GM
Description
IC MCU 8BIT 4KB FLASH 24QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F9xxr
Datasheets

Specifications of C8051F988-GM

Program Memory Type
FLASH
Program Memory Size
4KB (4K x 8)
Package / Case
24-UQFN Exposed Pad, 24-HUQFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
17
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F9x
Core
8051
Data Ram Size
512 B
Interface Type
I2C, SMBus, Enhanced UART, Enhanced SPI
Maximum Clock Frequency
7 KHz
Number Of Programmable I/os
17
Number Of Timers
4
Operating Supply Voltage
2.4 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F996DK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 10 Channel
On-chip Dac
10 bit, 4 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1959-5
4.2.
Table 4.2. Global Electrical Characteristics
–40 to +85 °C, 25 MHz system clock unless otherwise specified. See "AN358: Optimizing Low Power Operation of the
‘F9xx" for details on how to achieve the supply current specifications listed in this table.
Supply Voltage (V
Minimum RAM Data 
Retention Voltage
SYSCLK (System Clock)
T
T
Specified Operating 
Temperature Range
Digital Supply Current—CPU Active (Normal Mode, fetching instructions from Flash)
I
I
Sensitivity
DD
DD
SYSH
SYSL
3, 4, 5
Frequency 
(SYSCLK Low Time)
(SYSCLK High Time)
Electrical Characteristics
Parameter
1, 3, 5
1
DD
)
2
(includes external oscillator/GPIO current)
(includes SmaRTClock oscillator current)
(Flash oneshot active, see Section 14.6)
V
V
(Flash oneshot bypassed, see Section
(includes low power oscillator current)
DD
DD
(includes precision oscillator current)
V
V
= 1.8–3.6 V, T = 25
= 1.8–3.6 V, T = 25
DD
V
DD
DD
V
V
= 1.8–3.6 V, F = 32.768 kHz
= 1.8–3.6 V, F = 24.5 MHz
DD
DD
= 1.8–3.6 V, F = 20 MHz
not in sleep mode
in sleep mode
= 1.8 V, F = 1 MHz
= 3.6 V, F = 1 MHz
Conditions
Rev. 1.0
14.6)
°
°
C8051F99x-C8051F98x
C, F < 14 MHz
C, F > 14 MHz
Min
–40
1.8
18
18
0
Typ
225
290
174
2.4
1.4
0.3
3.6
3.1
84
88
Max
0.45
+85
3.6
4.5
25
µA/MHz
µA/MHz
Units
MHz
mA
mA
µA
µA
µA
ns
ns
°C
V
V
47

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