C8051F988-GM Silicon Laboratories Inc, C8051F988-GM Datasheet - Page 56

• Manufacturer Part Number: C8051F988-GM
• Description: IC MCU 8BIT 4KB FLASH 24QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F9xxr

Specifications of C8051F988-GM

• Program Memory Type: FLASH
• Program Memory Size: 4KB (4K x 8)
• Package / Case: 24-UQFN Exposed Pad, 24-HUQFN
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 17
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: C8051F9x
• Core: 8051
• Data Ram Size: 512 B
• Interface Type: I2C, SMBus, Enhanced UART, Enhanced SPI
• Maximum Clock Frequency: 7 KHz
• Number Of Programmable I/os: 17
• Number Of Timers: 4
• Operating Supply Voltage: 2.4 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F996DK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 10 Channel
• On-chip Dac: 10 bit, 4 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1959-5

C8051F99x-C8051F98x
Table 4.5. Power Management Electrical Specifications
V
Table 4.6. Flash Electrical Characteristics
V
Table 4.7. Internal Precision Oscillator Electrical Characteristics
V
Table 4.8. Internal Low-Power Oscillator Electrical Characteristics
V
56
Flash Size
Endurance
Erase Cycle Time
Write Cycle Time
Idle Mode Wake-up Time
Suspend Mode Wake-up Time
Sleep Mode Wake-up Time
Oscillator Frequency
Oscillator Supply Current 
(from V
*Note: Does not include clock divider or clock tree supply current.
Oscillator Frequency
Oscillator Supply Current 
(from V
*Note: Does not include clock divider or clock tree supply current.
DD
DD
DD
DD
= 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
= 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
= 1.8 to 3.6 V; T
= 1.8 to 3.6 V; T
Parameter
DD
DD
Parameter
)
Parameter
)
Parameter
A
A
= –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
= –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
C8051F980/1/6/7, C8051F990/1/6/7
25 °C; includes bias current
C8051F982/3/8/9
Low Power or Precision Osc.
No separate bias current
Conditions
C8051F985
V
V
–40 to +85 °C,
–40 to +85 °C,
DD
of 90–100 µA
DD
Conditions
Conditions
CLKDIV = 0x00
required
Conditions
= 1.8–3.6 V
= 1.8–3.6 V
25 °C
Rev. 1.0
8192
4096
2048
20 k
Min
Min
Min
28
57
24
18
—
—
Min
—
—
2
100k
Typ
300*
100*
24.5
32
64
—
—
—
Typ
Typ
20
Typ
400
—
2
Max
—
—
—
—
36
71
Max
Max
Max
25
22
—
—
—
—
3
Erase/Write
SYSCLKs
Cycles
Units
bytes
bytes
bytes
Units
Units
ms
MHz
MHz
Units
µs
µA
µA
ns
µs