C8051F988-GM Silicon Laboratories Inc, C8051F988-GM Datasheet - Page 156

IC MCU 8BIT 4KB FLASH 24QFN

C8051F988-GM

Manufacturer Part Number
C8051F988-GM
Description
IC MCU 8BIT 4KB FLASH 24QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F9xxr
Datasheets

Specifications of C8051F988-GM

Program Memory Type
FLASH
Program Memory Size
4KB (4K x 8)
Package / Case
24-UQFN Exposed Pad, 24-HUQFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
17
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F9x
Core
8051
Data Ram Size
512 B
Interface Type
I2C, SMBus, Enhanced UART, Enhanced SPI
Maximum Clock Frequency
7 KHz
Number Of Programmable I/os
17
Number Of Timers
4
Operating Supply Voltage
2.4 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F996DK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 10 Channel
On-chip Dac
10 bit, 4 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1959-5
C8051F99x-C8051F98x
14.5.2. PSWE Maintenance
1. Reduce the number of places in code where the PSWE bit (b0 in PSCTL) is set to a 1. There should be
2. Minimize the number of variable accesses while PSWE is set to a 1. Handle pointer address updates
3. Disable interrupts prior to setting PSWE to a 1 and leave them disabled until after PSWE has been
4. Make certain that the Flash write and erase pointer variables are not located in XRAM. See your
5. Add address bounds checking to the routines that write or erase Flash memory to ensure that a routine
14.5.3. System Clock
1. If operating from an external crystal, be advised that crystal performance is susceptible to electrical
2. If operating from the external oscillator, switch to the internal oscillator during Flash write or erase
Additional Flash recommendations and example code can be found in “AN201: Writing to Flash from Firm-
ware", available from the Silicon Laboratories web site.
156
exactly one routine in code that sets PSWE to a 1 to write Flash bytes and one routine in code that sets
both PSWE and PSEE both to a 1 to erase Flash pages.
and loop maintenance outside the "PSWE = 1;... PSWE = 0;" area. Code examples showing this can be
found in :AN201: "Writing to Flash from Firmware", available from the Silicon Laboratories website.
reset to 0. Any interrupts posted during the Flash write or erase operation will be serviced in priority
order after the Flash operation has been completed and interrupts have been re-enabled by software.
compiler documentation for instructions regarding how to explicitly locate variables in different memory
areas.
called with an illegal address does not result in modification of the Flash.
interference and is sensitive to layout and to changes in temperature. If the system is operating in an
electrically noisy environment, use the internal oscillator or use an external CMOS clock.
operations. The external oscillator can continue to run, and the CPU can switch back to the external
oscillator after the Flash operation has completed.
Rev. 1.0

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