S9S12HY64J0MLH Freescale Semiconductor, S9S12HY64J0MLH Datasheet - Page 613

MCU 64K FLASH AUTO 64-LQFP

S9S12HY64J0MLH

Manufacturer Part Number
S9S12HY64J0MLH
Description
MCU 64K FLASH AUTO 64-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet

Specifications of S9S12HY64J0MLH

Core Processor
HCS12
Core Size
16-Bit
Speed
32MHz
Connectivity
CAN, EBI/EMI, I²C, IrDA, LIN, SCI, SPI
Peripherals
LCD, Motor control PWM, POR, PWM, WDT
Number Of I /o
50
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
64-LQFP
Controller Family/series
S12
No. Of I/o's
50
Ram Memory Size
4KB
Cpu Speed
64MHz
No. Of Timers
2
Rohs Compliant
Yes
Processor Series
S12HY
Core
HCS12
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
DEMO9S12HY64
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S9S12HY64J0MLH
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Chapter 17
64 KByte Flash Module (S12FTMRC64K1V1)
17.1
The FTMRC64K1 module implements the following:
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
Freescale Semiconductor
Revision
Number
V01.11
V01.12
V01.13
64 Kbytes of P-Flash (Program Flash) memory
4 Kbytes of D-Flash (Data Flash) memory
Introduction
19 Dec 2008
25 Sep 2009
28 Jul 2008
Revision
Date
17.4.5.4/17-647
17.4.5.6/17-649
17.4.5.11/17-65
17.4.5.11/17-65
17.4.5.11/17-65
17.3.2.1/17-622
17.4.3.2/17-640
17.1.1/17-614
17.3.1/17-617
17.5.2/17-661
17.3.2/17-620
17.1/17-613
17.6/17-662
Sections
Affected
MC9S12HY/HA-Family Reference Manual, Rev. 1.04
3
3
3
Table 17-1. Revision History
- Remove reference to IFRON in Program IFR definition
- Remove reference to IFRON in
- Clarify single bit fault correction for P-Flash phrase
- Add statement concerning code runaway when executing Read Once,
Program Once, and Verify Backdoor Access Key commands from Flash block
containing associated fields
- Relate Key 0 to associated Backdoor Comparison Key address
- Change “power down reset” to “reset”
- Reformat section on unsecuring MCU using BDM
The following changes were made to clarify module behavior related to Flash
register access during reset sequence and while Flash commands are active:
- Add caution concerning register writes while command is active
- Writes to FCLKDIV are allowed during reset sequence while CCIF is clear
- Add caution concerning register writes while command is active
- Writes to FCCOBIX, FCCOBHI, FCCOBLO registers are ignored during
reset sequence
Description of Changes
Table 17-4
and
Figure 17-3
613

Related parts for S9S12HY64J0MLH