HD64F36912GFH Renesas Electronics America, HD64F36912GFH Datasheet - Page 360

• Manufacturer Part Number: HD64F36912GFH
• Description: IC H8 MCU FLASH 8K 32-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300H Tinyr

Specifications of HD64F36912GFH

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 12MHz
• Connectivity: I²C, SCI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 1.5K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 32-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 20 Electrical Characteristics
Item
Erase
Notes: 1. Make the time settings in accordance with the program/erase algorithms.
Rev. 3.00 Sep. 14, 2006 Page 330 of 408
REJ09B0105-0300
2. The programming time for 64 bytes. (Indicates the total time for which the P bit in flash
3. The time required to erase one block. (Indicates the time for which the E bit in flash
4. Programming time maximum value (t
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
6. Erase time maximum value (t
7. Set the maximum erase count (N) according to the actual set value of (z), so that it
Programming count (n)
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
maximum programming count (N)
and z3, so that it does not exceed the programming time maximum value (t
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the programming count (n).
erase count (N)
does not exceed the erase time maximum value (t
Wait time after SWE
bit setting*
Wait time after ESU
bit setting*
Wait time after E bit
setting*
Wait time after E bit
clear*
Wait time after ESU
bit clear*
Wait time after EV
bit setting*
Wait time after
dummy write*
Wait time after EV
bit clear*
Wait time after SWE
bit clear*
Maximum erase
count*
1
7
1
n
n
1
*
1
*
6
1
1
1
*
6
6
1000
7
1
1
1
1
z1 = 30 µs
z2 = 200 µs
E
Symbol
x
y
z
N
(max.)) = wait time after E bit setting (z)
P
(max.)) = wait time after P bit setting (z)
Test
Condition
E
(max.)).
Min.
1
100
10
10
10
20
2
4
100
—
Values
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
—
—
100
—
—
—
—
—
—
120
maximum
P
(max.)).
Unit
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times