XC68HC12A0CPV8 Freescale Semiconductor, XC68HC12A0CPV8 Datasheet - Page 115

• Manufacturer Part Number: XC68HC12A0CPV8
• Description: IC, 16BIT MCU, 68HC12, 8MHZ, TQFP-112
• Manufacturer: Freescale Semiconductor

Specifications of XC68HC12A0CPV8

• Controller Family/series: 68HC12
• No. Of I/o's: 68
• Eeprom Memory Size: 1KB
• Ram Memory Size: 2KB
• Cpu Speed: 8MHz
• No. Of Timers: 1
• Core Size: 16 Bit
• Program Memory Size: 60KB
• Peripherals: ADC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8.6 Program/Erase Operation
8.7 Shadow Word Mapping
MC68HC912D60A — Rev. 3.1
Freescale Semiconductor
A program or erase operation should follow the sequence below if AUTO
bit is clear:
If the AUTO bit is set, steps 4 and 5 can be replaced by a step to poll the
EEPGM bit until it is cleared.
It is possible to program/erase more bytes or words without intermediate
EEPROM reads, by jumping from step 5 to step 2.
The shadow word is mapped to location $_FC0 and $_FC1 when the
NOSHW bit in EEMCR register is zero. The value in the shadow word is
loaded to the EEMCR, EEDIVH and EEDIVL after reset.
shows the mapping of each bit from shadow word to the registers
1. Reserved for testing. Must be set to one in user application.
2. Reserved. Must be set to one in user application for future compatibility.
1. Write BYTE, ROW and ERASE to desired value, write EELAT = 1
2. Write a byte or an aligned word to an EEPROM address
3. Write EEPGM = 1
4. Wait for programming,
5. Write EEPGM = 0
6. Write EELAT = 0
Shadow word location
$_FC0, bit 3:2
$_FC0, bit 1:0
$_FC1, bit 7:0
$_FC0, bit 6
$_FC0, bit 5
$_FC0, bit 4
$_FC0 bit 7
EEPROM Memory
Table 8-4. Shadow word mapping
t
PROG
or erase,
t
ERASE
EEMCR / NOBDML
EEMCR / FPOPEN
EEDIVCLK / bit 7:0
EEMCR / NOSHW
EEMCR / bit 5
EEDIVH / bit 1:0
not mapped
Register / Bit
delay time (10ms)
Program/Erase Operation
EEPROM Memory
Table 8-4
(2)
(1)
Technical Data
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