mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet

mt46h8m16lfcf-75-it

Manufacturer Part Number

mt46h8m16lfcf-75-it

Description

128mb Mobile Ddr Sdram Mt46h4m32lfb5-6

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT46H8M16LFCF-75-IT.pdf (84 pages)

Current page: 1 of 84
Download datasheet (3Mb)

Mobile DDR SDRAM

MT46H8M16LF – 2 Meg x 16 x 4 banks

MT46H4M32LF – 1 Meg x 32 x 4 banks

Features

• V

• Bidirectional data strobe per byte of data (DQS)

• Internal, pipelined double data rate (DDR)

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

• Four internal banks for concurrent operation

• Data masks (DM) for masking write data—one mask

• Programmable burst lengths: 2, 4, 8, or 16

• Concurrent auto precharge option is supported

• Auto refresh and self refresh modes

• 1.8V LVCMOS-compatible inputs

• On-chip temperature sensor to control self refresh

• Partial-array self refresh (PASR)

• Deep power-down (DPD)

• Status read register (SRR)

• Selectable output drive strength (DS)

• Clock stop capability

• 64ms refresh

Table 2:

PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce

128mb_mobile_ddr_sdram_t35m__1.fm - Rev. B 06/08 EN

‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by

Architecture

Configuration

Refresh count

Row addressing

Column addressing

architecture; two data accesses per clock cycle

aligned with data for WRITEs

per byte

rate

Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.

DD/

Q = 1.70–1.95V

Configuration Addressing

2 Meg x 16 x 4 banks

8 Meg x 16

4K (A[11:0])

512 (A[8:0])

Options

• V

• Configuration

• Row-size option

• Plastic “green” package

• Timing – cycle time

• Operating temperature range

• Die revision

Notes: 1. Only available for x16 configuration.

Table 1:

– 1.8V/1.8V

– 8 Meg x 16 (2 Meg x 16 x 4 banks)

– 4 Meg x 32 (1 Meg x 32 x 4 banks)

– JEDEC-standard option

– 60-ball VFBGA (8mm x 9mm)

– 90-ball VFBGA (8mm x 13mm)

– 5ns @ CL = 3

– 5.4ns @ CL = 3

– 6ns @ CL = 3

– 7.5ns @ CL = 3

– Commercial (0° to +70°C)

– Industrial (–40°C to +85°C)

Speed Grade

Micron Technology, Inc., reserves the right to change products or specifications without notice.

128Mb: x16, x32 Mobile DDR SDRAM

2. Only available for x32 configuration.

-54

-75

-5

-6

Key Timing Parameters (CL = 3)

Clock Rate (MHz)

200

185

166

133

1 Meg x 32 x 4 banks

4 Meg x 32

256 (A[7:0])

4K (A11:0])

Access Time

Marking

Preliminary

5.0ns

6.0ns

Features

8M16

4M32

None

-54

-75

-5

-6

‡

Related parts for mt46h8m16lfcf-75-it

Related keywords

mt46h8m16lfcf-75-it datasheet
mt46h8m16lfcf-75-it data sheet
mt46h8m16lfcf-75-it pdf datasheet
mt46h8m16lfcf-75-it component
mt46h8m16lfcf-75-it part
mt46h8m16lfcf-75-it distributor
mt46h8m16lfcf-75-it RoHS
mt46h8m16lfcf-75-it datasheet download