mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet - Page 29

• Manufacturer Part Number: mt46h8m16lfcf-75-it
• Description: 128mb Mobile Ddr Sdram Mt46h4m32lfb5-6
• Manufacturer: Micron Semiconductor Products

READ
Figure 10:
WRITE
PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. B 06/08 EN
READ Command
Notes:
The READ command is used to initiate a burst read access to an active row. The values
on the BA0 and BA1 inputs select the bank; the address provided on inputs A[0:Ai]
(where i = the most significant column address bit for each configuration) selects the
starting column location. The value on input A10 determines whether auto precharge is
used. If auto precharge is selected, the row being accessed will be precharged at the end
of the READ burst; if auto precharge is not selected, the row will remain open for subse-
quent accesses.
1. EN AP = enable auto precharge; DIS AP = disable auto precharge.
The WRITE command is used to initiate a burst write access to an active row. The values
on the BA0 and BA1 inputs select the bank; the address provided on inputs A[0:i] (where
i = the most significant column address bit for each configuration) selects the starting
column location. The value on input A10 determines whether auto precharge is used. If
auto precharge is selected, the row being accessed will be precharged at the end of the
WRITE burst; if auto precharge is not selected, the row will remain open for subsequent
accesses. Input data appearing on the DQs is written to the memory array subject to the
Address
BA0,1
CAS#
RAS#
WE#
A10
CKE
CK#
CS#
CK
HIGH
Column
DIS AP
EN AP
Bank
Don’t Care
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128Mb: x16, x32 Mobile DDR SDRAM
©2007 Micron Technology, Inc. All rights reserved.
Commands
Preliminary