mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet - Page 31

• Manufacturer Part Number: mt46h8m16lfcf-75-it
• Description: 128mb Mobile Ddr Sdram Mt46h4m32lfb5-6
• Manufacturer: Micron Semiconductor Products

PRECHARGE
Figure 12:
BURST TERMINATE
PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. B 06/08 EN
PRECHARGE Command
Notes:
1. If A10 is HIGH, bank address becomes “Don’t Care.”
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access a
specified time (
whether one or all banks are to be precharged, and in the case where only one bank is to
be precharged, inputs BA0 and BA1 select the bank. Otherwise, BA0 and BA1 are treated
as “Don’t Care.” After a bank has been precharged, it is in the idle state and must be acti-
vated prior to any READ or WRITE commands being issued to that bank.
The BURST TERMINATE command is used to truncate READ bursts with auto precharge
disabled. The most recently registered READ command prior to the BURST TERMINATE
command will be truncated, as described in “READs” on page 49. The open page from
which the READ was terminated remains open.
BA0, BA1
Address
RAS#
CAS#
WE#
CK#
CKE
A10
CS#
CK
HIGH
t
RP) after the PRECHARGE command is issued. Input A10 determines
Single bank
All banks
Bank
Don’t Care
31
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16, x32 Mobile DDR SDRAM
©2007 Micron Technology, Inc. All rights reserved.
Commands
Preliminary