mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet - Page 66

• Manufacturer Part Number: mt46h8m16lfcf-75-it
• Description: 128mb Mobile Ddr Sdram Mt46h4m32lfb5-6
• Manufacturer: Micron Semiconductor Products

Figure 37:
PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. B 06/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Uninterrupting
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An uninterrupted burst of 4 is shown.
3.
4. The READ and WRITE commands are to the same device. However, the READ and WRITE
5. A10 is LOW with the WRITE command (auto precharge is disabled).
t
commands may be to different devices, in which case
command could be applied earlier.
D
WTR is referenced from the first positive CK edge after the last data-in pair.
b
IN
IN
NOP
D
b = data-in for column b; D
T1
b
IN
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
b+2
b+1
D
D
IN
IN
b+2
NOP
D
T2
IN
b+3
b+2
D
D
IN
IN
b+3
T2n
D
IN
b+3
D
66
IN
OUT
T3
NOP
t
WTR
n = data-out for column n.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16, x32 Mobile DDR SDRAM
Bank a,
READ
Col n
T4
Don’t Care
t
WTR is not required and the READ
CL = 2
CL = 2
CL = 2
T5
NOP
©2007 Micron Technology, Inc. All rights reserved.
T5n
Transitioning Data
Timing Diagrams
D
D
D
OUT
OUT
OUT
n
n
n
T6
NOP
D
n + 1
D
n + 1
D
n + 1
Preliminary
OUT
OUT
OUT
T6n