mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet - Page 44

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mt46h8m16lfcf-75-it

Manufacturer Part Number
mt46h8m16lfcf-75-it
Description
128mb Mobile Ddr Sdram Mt46h4m32lfb5-6
Manufacturer
Micron Semiconductor Products
Datasheet
CAS Latency (CL)
Figure 17:
Operating Mode
Extended Mode Register
PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. B 06/08 EN
CAS Latency
The CAS latency is the delay, in clock cycles, between the registration of a READ
command and the availability of the first output data. The latency can be set to 2 or 3
clocks, as shown in Figure 17 on page 44.
For CL = 3, if the READ command is registered at clock edge n, then the data will be
nominally available at (n + 2 clocks +
at clock edge n, then the data will be nominally available at (n + 1 clock +
The normal operating mode is selected by issuing a LOAD MODE REGISTER command
with bits A[7:n] each set to zero, and bits A[6:0] set to the desired values.
All other combinations of values for A[7:n] are reserved for future use. Reserved states
should not be used because unknown operation or incompatibility with future versions
may result.
The extended mode register controls additional functions beyond those set by the mode
registers. These additional functions include drive strength, TCSR, and PASR.
Command
Command
DQS
DQS
DQ
DQ
CK#
CK#
CK
CK
READ
READ
T0
T0
CL - 1
CL = 2
CL - 1
44
NOP
NOP
T1
T1
t
AC
CL = 3
t
T1n
Transitioning Data
AC). For CL = 2, if the READ command is registered
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16, x32 Mobile DDR SDRAM
D
T2
NOP
OUT
NOP
n
T2
t
AC
T2n
D
n + 1
T2n
OUT
D
D
n + 2
T3
OUT
NOP
NOP
n
OUT
T3
Don’t Care
©2007 Micron Technology, Inc. All rights reserved.
T3n
D
n + 3
D
n + 1
T3n
OUT
OUT
t
Operations
AC).
Preliminary

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