mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet - Page 51

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mt46h8m16lfcf-75-it

Manufacturer Part Number
mt46h8m16lfcf-75-it
Description
128mb Mobile Ddr Sdram Mt46h4m32lfb5-6
Manufacturer
Micron Semiconductor Products
Datasheet
Figure 22:
PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. B 06/08 EN
Command
Command
Address
Address
Consecutive READ Bursts
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts the
3. Shown with nominal
4. Example applies only when READ commands are issued to same device.
first).
OUT
CL = 2
n (or b) = data-out from column n (or column b).
NOP
NOP
T1
T1
CL = 3
T1n
t
AC,
D
READ
Bank,
n
READ
Bank,
Col b
OUT
Col b
T2
1
T2
t
DQSCK, and
51
D
n + 1
T2n
T2n
OUT
D
D
n + 2
OUT
n
NOP
NOP
T3
OUT
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
128Mb: x16, x32 Mobile DDR SDRAM
DQSQ.
D
n + 1
Don’t Care
T3n
D
n + 3
T3n
OUT
OUT
D
n + 2
OUT
D
T4
NOP
T4
NOP
OUT
b
D
n + 3
T4n
T4n
OUT
D
b + 1
OUT
Transitioning Data
©2007 Micron Technology, Inc. All rights reserved.
D
T5
NOP
T5
NOP
D
b + 2
OUT
Timing Diagrams
b
OUT
T5n
T5n
D
b + 1
D
b + 3
OUT
OUT
Preliminary

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