mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet - Page 28

• Manufacturer Part Number: mt46h8m16lfcf-75-it
• Description: 128mb Mobile Ddr Sdram Mt46h4m32lfb5-6
• Manufacturer: Micron Semiconductor Products

DESELECT
NO OPERATION (NOP)
LOAD MODE REGISTER
ACTIVE
Figure 9:
PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. B 06/08 EN
ACTIVE Command
The DESELECT function (CS# HIGH) prevents new commands from being executed by
the Mobile DDR SDRAM. Operations already in progress are not affected.
The NO OPERATION (NOP) command is used to instruct the selected Mobile DDR
SDRAM to perform a NOP . This prevents unwanted commands from being registered
during idle or wait states. Operations already in progress are not affected.
The mode registers are loaded via inputs A[0:n]. See mode register descriptions in
“Register Definition” on page 41. The LOAD MODE REGISTER command can only be
issued when all banks are idle, and a subsequent executable command cannot be issued
until
The ACTIVE command is used to open (or activate) a row in a particular bank for a
subsequent access. The values on the BA0 and BA1 inputs select the bank, and the
address provided on inputs A[0:n] selects the row. This row remains active (or open) for
accesses until a PRECHARGE command is issued to that bank. A PRECHARGE
command must be issued before opening a different row in the same bank.
BA0, BA1
Address
RAS#
CAS#
t
WE#
MRD is met.
CK#
CKE
CS#
CK
HIGH
Bank
Row
Don’t Care
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16, x32 Mobile DDR SDRAM
©2007 Micron Technology, Inc. All rights reserved.
Commands
Preliminary