mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet - Page 73
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mt46h8m16lfcf-75-it
Manufacturer Part Number
mt46h8m16lfcf-75-it
Description
128mb Mobile Ddr Sdram Mt46h4m32lfb5-6
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H8M16LFCF-75-IT.pdf
(84 pages)
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Figure 43:
PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. B 06/08 EN
Case 1:
Case 2:
Command
BA0, BA1
Address
DQS
DQS
t
DQ
t
DQ
CK#
CKE
A10
DM
AC (MIN) and
AC (MAX) and
CK
4
1
1
Bank Read – with Auto Precharge
t
t
IS
IS
NOP
T0
t
DQSCK (MIN)
t
Notes:
t
DQSCK (MAX)
5
t
IH
IH
Bank x
ACTIVE
t
t
1. D
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. NOP commands are shown for ease of illustration; other commands may be valid at these
5. Refer to Figure 28 on page 57 and Figure 29 on page 58 for detailed DQS and DQ timing.
IS
IS
Row
Row
T1
times.
t
t
IH
IH
OUT
t
CK
n = data-out from column n.
t
t
RAS
RCD
t
RC
NOP
T2
5
t
CH
t
CL
t
3
Bank x
READ
IS
Col n
t
LZ (MIN)
T3
t
2
IH
73
t
CL = 2
RPRE
t
t
LZ (MIN)
AC (MIN)
NOP
T4
5
t
AC (MAX)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16, x32 Mobile DDR SDRAM
t
D
RPRE
OUT
n
t
DQSCK (MIN)
NOP
D
n + 1
T5
OUT
D
t
OUT
n
5
DQSCK (MAX)
T5n
D
n + 2
OUT
D
n + 1
OUT
t
RP
NOP
D
n + 3
T6
t
D
n + 2
RPST
OUT
OUT
Don’t Care
5
©2007 Micron Technology, Inc. All rights reserved.
T6n
t
HZ (MAX)
D
t
n + 3
RPST
OUT
Timing Diagrams
NOP
T7
5
Transitioning Data
Preliminary
ACTIVE
Bank x
Row
Row
T8
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