mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet - Page 21

• Manufacturer Part Number: mt46h8m16lfcf-75-it
• Description: 128mb Mobile Ddr Sdram Mt46h4m32lfb5-6
• Manufacturer: Micron Semiconductor Products

Table 10:
PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce
128mb_mobile_ddr_sdram_t35m__2.fm - Rev. B 06/08 EN
Parameter
Address and control input setup
time (fast slew rate)
Address and control input setup
time (slow slew rate)
Address and control input pulse
width
LOAD MODE REGISTER command
cycle time
DQ–DQS hold, DQS to first DQ to
go non-valid, per access
Data hold skew factor
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE/ACTIVE-to-
AUTO REFRESH command period
ACTIVE-to-READ or WRITE delay
Refresh period
Average periodic refresh interval
AUTO REFRESH command period
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b
command
Read of SRR to next valid
command
SRR-to-READ
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ command
delay
Exit power-down mode to first
valid command
Exit SELF REFRESH to first valid
command
Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes: 1–7 apply to all the parameters in this table; V
Notes:
1. All voltages referenced to V
2. All parameters assume proper device initialization.
3. Tests for AC timing and electrical AC and DC characteristics may be conducted at nominal
4. The circuit shown below represents the timing reference load used in defining the relevant
CL = 3
CL = 2
supply voltage levels, but the related specifications and device operation are guaranteed
for the full voltage ranges specified.
timing parameters of the device. It is not intended to be either a precise representation of
the typical system environment or a depiction of the actual load presented by a production
tester. System designers will use IBIS or other simulation tools to correlate the timing refer-
Symbol
t
t
WPRES
t
t
t
t
WPRE
t
t
WPST
t
t
t
t
t
t
RPRE
t
t
t
MRD
t
RPST
t
t
WTR
QHS
RCD
REFI
RRD
IPW
RAS
t
t
t
t
RFC
t
SRC
SRR
XSR
REF
WR
QH
IS
IS
RC
RP
XP
F
S
CL + 1
t
t
Min
0.25
QHS
HP -
0.9
1.1
2.3
0.9
0.5
0.4
0.4
40
80
10
80
55
15
15
15
2
–
–
–
2
0
2
1
-5
70,000
Max
15.6
0.5
1.1
1.1
0.6
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
SS
21
.
CL + 1
t
t
Min
58.2
16.2
16.2
10.8
0.25
QHS
HP -
1.0
1.2
2.5
0.9
0.5
0.4
0.4
42
80
15
80
2
–
–
–
2
0
2
1
DD
-54
/V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
70,000
Max
128Mb: x16, x32 Mobile DDR SDRAM
15.6
DD
0.5
1.1
1.1
0.6
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q = 1.70–1.95V
CL + 1
t
t
Min
t
0.25
QHS
HP -
1.1
1.3
IS +
t
0.9
0.5
0.4
0.4
42
60
18
80
18
12
15
80
IH
2
–
2
0
2
1
–
–
-6
70,000
Max
0.65
15.6
1.1
1.1
0.6
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Electrical Specifications
CL + 1
t
t
Min
t
67.5
22.5
22.5
0.25
©2007 Micron Technology, Inc. All rights reserved.
QHS
HP -
1.3
0.9
0.5
0.4
0.4
1.5
IS +
t
45
80
15
15
80
IH
2
–
–
–
2
0
1
1
-75
70,000
Max
0.75
15.6
1.1
1.1
0.6
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit Notes
t
t
t
t
t
t
t
t
t
t
ms
ns
ns
ns
CK
ns
ns
ns
ns
ns
µs
ns
ns
CK
CK
CK
ns
CK
CK
CK
ns
CK
ns
CK
CK
ns
Preliminary
11, 17
9, 13
12
18
19
20
21
22