mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet - Page 14

• Manufacturer Part Number: mt46h8m16lfcf-75-it
• Description: 128mb Mobile Ddr Sdram Mt46h4m32lfb5-6
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Table 4:
Table 5:
PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce
128mb_mobile_ddr_sdram_t35m__2.fm - Rev. B 06/08 EN
Parameter
V
Voltage on any pin relative to V
Storage temperature (plastic)
Parameter/Condition
Supply voltage
I/O supply voltage
Address and command inputs
Input voltage high
Input voltage low
Clock inputs (CK, CK#)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential crossing voltage
Data inputs
DC input high voltage
DC input low voltage
AC input high voltage
AC input low voltage
Data outputs
DC output high voltage: Logic 1 (I
DC output low voltage: Logic 0 (I
Leakage current
Input leakage current
Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current
(DQs are disabled; 0V ≤ V
Operating temperature
Commercial
Industrial
DD
/V
DD
Q supply voltage relative to V
Absolute Maximum Ratings
Note 1 applies to all parameters in this table
AC/DC Electrical Characteristics and Operating Conditions
Notes: 1–5 apply to all parameters/conditions in this table; notes appear on page 15; V
IN
Notes:
≤ V
DD
OUT
1. V
Stresses greater than those listed in Table 4 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
≤ V
SS
DD
OL
OH
DD
and V
= 0.1mA)
Q)
= –0.1mA)
SS
DD
Q must be within 300mV of each other at all times. V
V
Symbol
DD
T
V
/V
STG
IN
DD
Q
Symbol
V
V
V
V
V
V
V
V
ID
ID
IH
IH
V
14
V
IL
IL
V
V
V
DD
V
I
T
T
OZ
I
DD
(
(
OH
(
(
(
(
OL
IH
IN
IX
A
A
IL
I
DC
AC
DC
AC
DC
AC
Q
)
)
)
)
)
)
Min
Micron Technology, Inc., reserves the right to change products or specifications without notice.
–1.0
–0.5
–55
0.8 × V
0.4 × V
0.6 × V
0.4 × V
0.7 × V
0.8 × V
0.9 × V
128Mb: x16, x32 Mobile DDR SDRAM
Min
1.70
1.70
–0.3
–0.3
–0.3
–0.3
–40
–1
–5
0
–
DD
DD
DD
DD
DD
DD
DD
Q
Q
Q
Q
Q
Q
Q
2.4 or (V
V
0.2 × V
V
V
V
0.6 × V
V
0.3 × V
V
0.2 × V
0.1
whichever is less
DD
DD
DD
DD
DD
DD
Electrical Specifications
Max
1.95
1.95
×
+70
+85
Q + 0.3
Q + 0.3
Q + 0.6
Q + 0.6
Q + 0.3
Q + 0.3
1
5
–
V
Max
+150
DD
DD
DD
DD
DD
DD
2.4
©2007 Micron Technology, Inc. All rights reserved.
Q + 0.3V),
Q
DD
Q
Q
Q
Q
Q must not exceed V
DD
/V
Unit
DD
µA
µA
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Q = 1.70–1.95V.
Preliminary
Notes
Unit
°C
6, 7
6, 7
8, 9
8, 9
8, 9
8, 9
8, 9
8, 9
V
V
10
10
11
DD
.