mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet - Page 61
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mt46h8m16lfcf-75-it
Manufacturer Part Number
mt46h8m16lfcf-75-it
Description
128mb Mobile Ddr Sdram Mt46h4m32lfb5-6
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H8M16LFCF-75-IT.pdf
(84 pages)
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Figure 31:
PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. B 06/08 EN
Data Input Timing
Notes:
2.
3.
4. For x16, LDQS controls the lower byte; UDQS controls the upper byte. For x32, DQS0 con-
5. For x16, LDM controls the lower byte; UDM controls the upper byte. For x32, DM0 controls
Data for any WRITE burst may be truncated by a subsequent PRECHARGE command, as
shown in Figure 41 on page 70 and Figure 42 on page 71. Note that only the data-in pairs
that are registered prior to the
subsequent data-in should be masked with DM, as shown in Figure 41 and Figure 42.
After the PRECHARGE command, a subsequent command to the same bank cannot be
issued until
1. WRITE command issued at T0.
DQS
DM
CK#
DQ
CK
t
t
trols DQ[7:0], DQS1 controls DQ[15:8], DQS2 controls DQ[23:16], and DQS3 controls
DQ[31:24].
DQ[7:0], DM1 controls DQ[15:8], DM2 controls DQ[23:16], and DM3 controls DQ[31:24].
DSH (MIN) generally occurs during
DSS (MIN) generally occurs during
4
5
t
WPRES
T0
t
RP is met.
t
1
DQSS
t DS
D
T1
b
IN
t
WPRE
t
DSH
t DH
61
t
T1n
WR period are written to the internal array, and any
2
t
Transitioning Data
t
DQSL
DSS
t
t
DQSS (MAX).
DQSS (MIN).
3
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
128Mb: x16, x32 Mobile DDR SDRAM
t
DQSH
DSH
T2n
2
t
t
WPST
DSS
3
T3
Don’t Care
©2007 Micron Technology, Inc. All rights reserved.
Timing Diagrams
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