H8S2110B RENESAS [Renesas Technology Corp], H8S2110B Datasheet - Page 469
H8S2110B
Manufacturer Part Number
H8S2110B
Description
Renesas 16-Bit Single-Chip Microcomputer Renesas H8S Family/H8S/2100 Series
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
1.H8S2110B.pdf
(559 pages)
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17.11
In programmer mode, the on-chip flash memory can be programmed/erased by a PROM
programmer via a socket adapter, just like for a discrete flash memory. Use a PROM programmer
that supports the Renesas 64-kbyte flash memory on-chip MCU device*. Figure 17.11 shows a
memory map in programmer mode.
Note: * Set the programming voltage of the PROM programmer to 3.3V.
17.12
The following lists notes on the use of on-board programming modes and programmer mode.
1. Perform programming/erasing with the specified voltage and timing.
2. Notes on power on/off
3. Perform flash memory programming/erasing in accordance with the recommended algorithm
If a voltage higher than the rated voltage is applied, the product may be fatally damaged. Use a
PROM programmer that supports the Renesas 64-kbyte flash memory on-chip MCU device at
3.3 V. Do not set the programmer to HN28F101 or the programming voltage to 5.0 V.
At powering on or off the Vcc power supply, fix the RES pin to low and set the flash memory
to hardware protection state. This power on/off timing must also be satisfied at a power-off and
power-on caused by a power failure and other factors.
In the recommended algorithm, flash memory programming/erasing can be performed without
subjecting this LSI to voltage stress or sacrificing program data reliability. When setting the P
or E bit in FLMCR1 to 1, set the watchdog timer against program runaway.
Programmer Mode
Usage Notes
H'00FFFF
MCU mode
H'000000
Figure 17.11 Memory Map in Programmer Mode
Undefined value output
On-chip ROM area
Rev. 2.00 Mar 21, 2006 page 431 of 518
Programmer mode
H'00000
H'0FFFF
H'1FFFF
REJ09B0299-0200
Section 17 ROM
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