US38024-BAG1 Renesas Electronics America, US38024-BAG1 Datasheet - Page 203

• Manufacturer Part Number: US38024-BAG1
• Description: DEV EVALUATION KIT H8/38024
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of US38024-BAG1

• Contents: 2G (Second-generation) Evaluation Board, HEW debugger support, Cable and CD-ROM
• For Use With/related Products: H8/38024
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

6.10.3
1. After completion of auto-program/auto-erase/status read operations, a transition is made to the
2. In memory read mode, command writes can be performed in the same way as in the command
3. After powering on, memory read mode is entered.
4. Tables 6.14 to 6.16 show the AC characteristics.
Table 6.14 AC Characteristics in Transition to Memory Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
command wait state. When reading memory contents, a transition to memory read mode must
first be made with a command write, after which the memory contents are read. Once memory
read mode has been entered, consecutive reads can be performed.
wait state.
Memory Read Mode
Figure 6.13 Timing Waveforms for Memory Read after Memory Write
CC
I/O7−I/O0
= 3.3 V ±0.3 V, V
Note: Data is latched on the rising edge of WE.
A15−A0
WE
OE
OE
CE
CE
Command write
t
ces
SS
t
f
Symbol
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
r
f
= 0 V, T
t
t
wep
ds
t
ceh
t
r
a
t
dh
= 25°C ±5°C
20
0
0
50
50
70
—
—
Min
t
nxtc
Rev. 8.00 Mar. 09, 2010 Page 181 of 658
Max
—
—
—
—
—
—
30
30
Memory read mode
Address stable
Unit
µs
ns
ns
ns
ns
ns
ns
ns
Notes
Figure 6.13
REJ09B0042-0800
Section 6 ROM