US38024-BAG1 Renesas Electronics America, US38024-BAG1 Datasheet - Page 541

• Manufacturer Part Number: US38024-BAG1
• Description: DEV EVALUATION KIT H8/38024
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of US38024-BAG1

• Contents: 2G (Second-generation) Evaluation Board, HEW debugger support, Cable and CD-ROM
• For Use With/related Products: H8/38024
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

16.8.6
Table 16.27
Condition:
Item
Programming time *
Erase time *
Reprogramming count
Data retain period
Programming
Flash Memory Characteristics
1
*
3
*
5
Flash Memory Characteristics
AV
operating voltage when reading), V
when programming/erasing), T
when programming/erasing: product with regular specifications, product with wide-
range temperature specifications)
Wait time after
SWE-bit setting *
Wait time after
PSU-bit setting *
Wait time after
P-bit setting *
Wait time after
P-bit clear *
Wait time after
PSU-bit clear *
Wait time after
PV-bit setting *
Wait time after
dummy write *
Wait time after
PV-bit clear *
Wait time after
SWE-bit clear *
Maximum
programming
count *
1
CC
*
2
*
1
4
= 2.7 V to 5.5 V, V
*
4
*
5
1
1
1
*
1
1
1
4
1
1
1
Symbol
t
t
N
t
x
y
z1
z2
z3
α
β
γ
ε
η
θ
N
P
E
DRP
WEC
SS
= AV
Min
—
—
1000 *
10 *
1
50
28
198
8
5
5
4
2
2
100
—
a
10
= –20°C to +75°C (range of operating temperature
SS
8
CC
= 0.0 V, V
Typ
7
100
10000 *
—
—
—
30
200
10
—
—
—
—
—
—
—
= 3.0 V to 5.5 V (range of operating voltage
Values
Rev. 8.00 Mar. 09, 2010 Page 519 of 658
9
Section 16 Electrical Characteristics
CC
Max
200
1200
—
—
—
—
32
202
12
—
—
—
—
—
—
1000
= 2.7 V to 5.5 V (range of
Unit
ms/128 bytes
ms/block
times
year
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
times
REJ09B0042-0800
Test
Conditions
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
Additional
programming