MC9S12NE64VTU Freescale Semiconductor, MC9S12NE64VTU Datasheet - Page 532

IC MCU 25MHZ ETHERNET/PHY 80TQFP

MC9S12NE64VTU

Manufacturer Part Number
MC9S12NE64VTU
Description
IC MCU 25MHZ ETHERNET/PHY 80TQFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet

Specifications of MC9S12NE64VTU

Mfg Application Notes
MC9S12NE64 Integrated Ethernet Controller Implementing an Ethernet Interface with the MC9S12NE64 Web Server Development with MC9S12NE64 and Open TCP
Core Processor
HCS12
Core Size
16-Bit
Speed
25MHz
Connectivity
EBI/EMI, Ethernet, I²C, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
38
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.375 V ~ 3.465 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
80-TQFP Exposed Pad, 80-eTQFP, 80-HTQFP, 80-VQFP
Data Bus Width
16 bit
Data Ram Size
8 KB
Interface Type
I2C, SCI, SPI
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
70
Number Of Timers
16 bit
Operating Supply Voltage
- 0.3 V to + 3 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
On-chip Adc
10 bit
For Use With
EVB9S12NE64E - BOARD EVAL FOR 9S12NE64DEMO9S12NE64E - DEMO BOARD FOR 9S12NE64
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

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Appendix A Electrical Characteristics
A.15
A.15.1
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency f
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Programming or erasing the NVM modules at a lower
frequency will not result in a full program or erase transition.
The FLASH program and erase operations are timed using a clock derived from the oscillator using the
FCLKDIV register. The frequency of this clock must be set within the limits specified as f
The minimum program and erase times shown in Table A-25 are calculated for maximum f
maximum f
A.15.1.1
The programming time for single word programming is dependent on the bus frequency as a well as on the
frequency f¨
A.15.1.2
FLASH programming where up to 32 words in a row can be programmed consecutively using burst
programming by keeping the command pipeline filled. The time to program a consecutive word can be
calculated as:
The time to program a whole row is:
Burst programming is more than two times faster than single word programming.
A.15.1.3
Erasing a 512 byte FLASH sector takes:
The setup times can be ignored for this operation.
532
FLASH NVM Electrical Characteristics
bus
NVMOP
NVM timing
Single Word Programming
Burst Programming
Sector Erase
. The maximum times are calculated for minimum f
and can be calculated according to the following formula.
NVMOSC
is required for performing program or erase operations. The NVM modules
t
t
swpgm
t
bwpgm
brpgm
MC9S12NE64 Data Sheet, Rev. 1.1
t
era
=
=
=
9
t
4
swpgm
4000
---------------------
f
NVMOP
---------------------
f
NVMOP
1
1
+
---------------------
f
NVMOP
31 t
1
+
+
25
9
bwpgm
NVMOP
----------
f
----------
f
bus
bus
1
1
and a f
bus
Freescale Semiconductor
of 2 MHz.
NVMOP
NVMOP
.
and

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