HD64F2378RVFQ33 Renesas Electronics America, HD64F2378RVFQ33 Datasheet - Page 263

• Manufacturer Part Number: HD64F2378RVFQ33
• Description: IC H8S MCU FLASH 512K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2378RVFQ33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

space to be output from a dedicated OE pin. In this case, the OE signal for DRAM space is output
from both the RD pin and the (OE) pin, but in external read cycles for other than DRAM space,
the signal is output only from the RD pin.
6.6.6
The column address output cycle can be changed from 2 states to 3 states by setting the CAST bit
to 1 in DRAMCR. Use the setting that gives the optimum specification values (CAS pulse width,
etc.) according to the DRAM connected and the operating frequency of this LSI. Figure 6.22
shows an example of the timing when a 3-state column address output cycle is selected.
Read
Write
Note: n = 2 to 5
Figure 6.22 Example of Access Timing with 3-State Column Address Output Cycle
Column Address Output Cycle Control
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
T
p
Row address
(RAST = 0)
High
High
T
r
Rev.7.00 Mar. 18, 2009 page 195 of 1136
T
c1
Column address
Section 6 Bus Controller (BSC)
T
c2
REJ09B0109-0700
T
c3