HD64F2378RVFQ33 Renesas Electronics America, HD64F2378RVFQ33 Datasheet - Page 266

• Manufacturer Part Number: HD64F2378RVFQ33
• Description: IC H8S MCU FLASH 512K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2378RVFQ33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.6.8
When DRAM is accessed, a RAS precharge time must be secured. With this LSI, one T
always inserted when DRAM space is accessed. From one to four T
setting bits TPC1 and TPC0 in DRACCR. Set the optimum number of T
DRAM connected and the operating frequency of this LSI. Figure 6.25 shows the timing when
two T
cycles.
Rev.7.00 Mar. 18, 2009 page 198 of 1136
REJ09B0109-0700
Read
Write
Note: n = 2 to 5
p
states are inserted. The setting of bits TPC1 and TPC0 is also valid for T
Precharge State Control
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
Figure 6.25 Example of Timing with Two-State Precharge Cycle
T
p1
(RAST = 0, CAST = 0)
Row address
T
p2
High
High
T
r
p
states can be selected by
T
c1
Column address
p
cycles according to the
p
states in refresh
T
c2
p
state is