SI1000-C-GM Silicon Laboratories Inc, SI1000-C-GM Datasheet - Page 142

• Manufacturer Part Number: SI1000-C-GM
• Description: IC TXRX MCU + EZRADIOPRO
• Manufacturer: Silicon Laboratories Inc

Specifications of SI1000-C-GM

• Package / Case: 42-QFN
• Frequency: 240MHz ~ 960MHz
• Data Rate - Maximum: 256kbps
• Modulation Or Protocol: FSK, GFSK, OOK
• Applications: General Purpose
• Power - Output: 20dBm
• Sensitivity: -121dBm
• Voltage - Supply: 1.8 V ~ 3.6 V
• Current - Receiving: 18.5mA
• Current - Transmitting: 85mA
• Data Interface: PCB, Surface Mount
• Memory Size: 64kB Flash, 4kB RAM
• Antenna Connector: PCB, Surface Mount
• Number Of Receivers: 1
• Number Of Transmitters: 1
• Wireless Frequency: 240 MHz to 960 MHz
• Interface Type: UART, SMBus, SPI, PCA
• Output Power: 20 dBm
• Operating Supply Voltage: 0.9 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Maximum Supply Current: 4.1 mA
• Minimum Operating Temperature: - 40 C
• Modulation: FSK, GFSK, OOK
• Protocol Supported: C2, SMBus
• Core: 8051
• Program Memory Type: Flash
• Program Memory Size: 64 KB
• Data Ram Size: 4352 B
• Supply Current (max): 4.1 mA
• Cpu Family: Si100x
• Device Core: 8051
• Device Core Size: 8b
• Frequency (max): 25MHz
• Total Internal Ram Size: 4.25KB
• # I/os (max): 22
• Number Of Timers - General Purpose: 4
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• On-chip Adc: 18-chx10-bit
• Instruction Set Architecture: CISC
• Mounting: Surface Mount
• Pin Count: 42
• Package Type: QFN EP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Operating Temperature: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1881-5

Si1000/1/2/3/4/5
13.1.2. Flash Erase Procedure
The Flash memory is organized in 1024-byte pages. The erase operation applies to an entire page (setting
all bytes in the page to 0xFF). To erase an entire 1024-byte page, perform the following steps:
1. Save current interrupt state and disable interrupts.
2. Set the PSEE bit (register PSCTL).
3. Set the PSWE bit (register PSCTL).
4. Write the first key code to FLKEY: 0xA5.
5. Write the second key code to FLKEY: 0xF1.
6. Using the MOVX instruction, write a data byte to any location within the 1024-byte page to be erased.
7. Clear the PSWE and PSEE bits.
8. Restore previous interrupt state.
Steps 4–6 must be repeated for each 1024-byte page to be erased.
Notes:
13.1.3. Flash Write Procedure
A write to Flash memory can clear bits to logic 0 but cannot set them; only an erase operation can set bits
to logic 1 in Flash. A byte location to be programmed should be erased before a new value is written.
The recommended procedure for writing a single byte in Flash is as follows:
1. Save current interrupt state and disable interrupts.
2. Ensure that the Flash byte has been erased (has a value of 0xFF).
3. Set the PSWE bit (register PSCTL).
4. Clear the PSEE bit (register PSCTL).
5. Write the first key code to FLKEY: 0xA5.
6. Write the second key code to FLKEY: 0xF1.
7. Using the MOVX instruction, write a single data byte to the desired location within the 1024-byte sector.
8. Clear the PSWE bit.
9. Restore previous interrupt state.
Steps 5–7 must be repeated for each byte to be written.
Notes:
142
1. Future 16 and 8 kB derivatives in this product family will use a 512-byte page size. To maintain code
2. Flash security settings may prevent erasure of some Flash pages, such as the reserved area and the page
3. 8-bit MOVX instructions cannot be used to erase or write to Flash memory at addresses higher than 0x00FF.
1. Future 16 and 8 kB derivatives in this product family will use a 512-byte page size. To maintain code
2. Flash security settings may prevent writes to some areas of Flash, such as the reserved area. For a summary
compatibility across the entire family, the erase procedure should be performed on each 512-byte section of
memory.
containing the lock bytes. For a summary of Flash security settings and restrictions affecting Flash erase
operations, please see Section “13.3. Security Options” on page 143.
compatibility across the entire family, the erase procedure should be performed on each 512-byte section of
memory.
of Flash security settings and restrictions affecting Flash write operations, please see Section “13.3. Security
Options” on page 143.
Rev. 1.0