SI1000-C-GM Silicon Laboratories Inc, SI1000-C-GM Datasheet - Page 61

• Manufacturer Part Number: SI1000-C-GM
• Description: IC TXRX MCU + EZRADIOPRO
• Manufacturer: Silicon Laboratories Inc

Specifications of SI1000-C-GM

• Package / Case: 42-QFN
• Frequency: 240MHz ~ 960MHz
• Data Rate - Maximum: 256kbps
• Modulation Or Protocol: FSK, GFSK, OOK
• Applications: General Purpose
• Power - Output: 20dBm
• Sensitivity: -121dBm
• Voltage - Supply: 1.8 V ~ 3.6 V
• Current - Receiving: 18.5mA
• Current - Transmitting: 85mA
• Data Interface: PCB, Surface Mount
• Memory Size: 64kB Flash, 4kB RAM
• Antenna Connector: PCB, Surface Mount
• Number Of Receivers: 1
• Number Of Transmitters: 1
• Wireless Frequency: 240 MHz to 960 MHz
• Interface Type: UART, SMBus, SPI, PCA
• Output Power: 20 dBm
• Operating Supply Voltage: 0.9 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Maximum Supply Current: 4.1 mA
• Minimum Operating Temperature: - 40 C
• Modulation: FSK, GFSK, OOK
• Protocol Supported: C2, SMBus
• Core: 8051
• Program Memory Type: Flash
• Program Memory Size: 64 KB
• Data Ram Size: 4352 B
• Supply Current (max): 4.1 mA
• Cpu Family: Si100x
• Device Core: 8051
• Device Core Size: 8b
• Frequency (max): 25MHz
• Total Internal Ram Size: 4.25KB
• # I/os (max): 22
• Number Of Timers - General Purpose: 4
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• On-chip Adc: 18-chx10-bit
• Instruction Set Architecture: CISC
• Mounting: Surface Mount
• Pin Count: 42
• Package Type: QFN EP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Operating Temperature: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1881-5

Table 4.10. Temperature Sensor Electrical Characteristics
V
Table 4.11. Voltage Reference Electrical Characteristics
V
Linearity
Slope
Slope Error
Offset
Offset Error
Temperature Sensor Settling
Time
Supply Current
Notes:
Internal High-Speed Reference (REFSL[1:0] = 11)
Output Voltage
VREF Turn-on Time
Supply Current
Internal Precision Reference (REFSL[1:0] = 00, REFOE = 1)
Output Voltage
VREF Short-Circuit Current
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
VREF Turn-on Time 3
Supply Current
External Reference (REFSL[1:0] = 00, REFOE = 0)
Input Voltage Range
Input Current
DD
DD
1. Represents one standard deviation from the mean.
2. The temperature sensor settling time, resulting from an ADC mux change or enabling of the temperature
= 1.8 to 3.6V V,
= 1.8 to 3.6 V,
2
sensor, varies with the voltage of the previously sampled channel and can be up to 6.5 µs if the previously
sampled channel voltage was greater than 3 V. To minimize the temperature sensor settling time, the ADC
mux can be momentarily set to ground before being set to the temperature sensor output. This ensures that
the temperature sensor output will settle in 3 µs or less.
Parameter
Parameter
1
1
–
40 to +85 °C unless otherwise specified.
–
40 to +85 °C unless otherwise specified.
no bypass cap, settling to 0.5 LSB
0.1 µF ceramic bypass, settling to
Sample Rate = 300 ksps; VREF =
4.7 µF tantalum, 0.1 µF ceramic
Load = 0 to 200 µA to AGND
bypass, settling to 0.5 LSB
Initial Voltage=3.6 V
Initial Voltage=0 V
V
V
–40 to +85 °C,
–40 to +85 °C,
DD
DD
Temp = 25 °C
Temp = 25 °C
Conditions
Conditions
0.5 LSB
= 1.8–3.6 V
= 1.8–3.6 V
3.0 V
Rev. 1.0
1.645
Min
1.60
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0
Si1000/1/2/3/4/5
1025
1.680
3.40
Typ
1.65
5.25
Typ
200
400
300
±1
40
18
35
—
3.5
15
25
15
—
—
Max
1.715
Max
1.70
3.0
6.5
V
—
—
—
—
—
—
1.7
—
—
—
—
—
—
—
—
DD
mV/°C
µV/°C
Units
µV/µA
Units
mV
mV
µA
°C
µs
mA
ms
µA
µA
µA
µs
µs
µs
V
V
V
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