SI1000-C-GM Silicon Laboratories Inc, SI1000-C-GM Datasheet - Page 72

• Manufacturer Part Number: SI1000-C-GM
• Description: IC TXRX MCU + EZRADIOPRO
• Manufacturer: Silicon Laboratories Inc

Specifications of SI1000-C-GM

• Package / Case: 42-QFN
• Frequency: 240MHz ~ 960MHz
• Data Rate - Maximum: 256kbps
• Modulation Or Protocol: FSK, GFSK, OOK
• Applications: General Purpose
• Power - Output: 20dBm
• Sensitivity: -121dBm
• Voltage - Supply: 1.8 V ~ 3.6 V
• Current - Receiving: 18.5mA
• Current - Transmitting: 85mA
• Data Interface: PCB, Surface Mount
• Memory Size: 64kB Flash, 4kB RAM
• Antenna Connector: PCB, Surface Mount
• Number Of Receivers: 1
• Number Of Transmitters: 1
• Wireless Frequency: 240 MHz to 960 MHz
• Interface Type: UART, SMBus, SPI, PCA
• Output Power: 20 dBm
• Operating Supply Voltage: 0.9 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Maximum Supply Current: 4.1 mA
• Minimum Operating Temperature: - 40 C
• Modulation: FSK, GFSK, OOK
• Protocol Supported: C2, SMBus
• Core: 8051
• Program Memory Type: Flash
• Program Memory Size: 64 KB
• Data Ram Size: 4352 B
• Supply Current (max): 4.1 mA
• Cpu Family: Si100x
• Device Core: 8051
• Device Core Size: 8b
• Frequency (max): 25MHz
• Total Internal Ram Size: 4.25KB
• # I/os (max): 22
• Number Of Timers - General Purpose: 4
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• On-chip Adc: 18-chx10-bit
• Instruction Set Architecture: CISC
• Mounting: Surface Mount
• Pin Count: 42
• Package Type: QFN EP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Operating Temperature: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1881-5

Si1000/1/2/3/4/5
72
Table 4.23. Absolute Maximum Ratings
V
Instantaneous V
Sustained V
Voltage on Digital Control Inputs
Voltage on Analog Inputs
RX Input Power
Operating Ambient Temperature Range T
Thermal Impedance 
Junction Temperature T
Storage Temperature Range T
Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
DD
to GND
device. These are stress ratings only and functional operation of the device at or beyond these ratings in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Power Amplifier may be damaged if switched on without proper
load or termination connected. TX matching network design will influence TX VRF-peak on TX output pin.
Caution: ESD sensitive device.
RF-peak
RF-peak
to GND on TX Output Pin
JA
J
to GND on TX Output Pin
STG
Parameter
A
Rev. 1.0
–0.3, V
–0.3, V
–55 to +125
–40 to +85
–0.3, +3.6
–0.3, +8.0
–0.3, +6.5
Value
+125
+10
30
DD
DD
+ 0.3
+ 0.3
C/W
dBm
Unit
C
C
C
V
V
V
V
V