MCF5407AI220 Freescale Semiconductor, MCF5407AI220 Datasheet - Page 269

IC MPU 32B 220MHZ COLDF 208-FQFP

MCF5407AI220

Manufacturer Part Number
MCF5407AI220
Description
IC MPU 32B 220MHZ COLDF 208-FQFP
Manufacturer
Freescale Semiconductor
Series
MCF540xr
Datasheets

Specifications of MCF5407AI220

Core Processor
Coldfire V4
Core Size
32-Bit
Speed
220MHz
Connectivity
EBI/EMI, I²C, UART/USART
Peripherals
DMA, WDT
Number Of I /o
16
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
0°C ~ 70°C
Package / Case
208-FQFP
Maximum Clock Frequency
220 MHz
Operating Supply Voltage
1.8 V, 3.3 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
0 C
Program Memory Size
24KB
Cpu Speed
220MHz
Embedded Interface Type
I2C, UART
Digital Ic Case Style
FQFP
No. Of Pins
208
Supply Voltage Range
3.3V
Rohs Compliant
Yes
For Use With
M5407C3 - KIT EVAL FOR MCF5407 W/ETHERNET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Chapter 11
Synchronous/Asynchronous DRAM
Controller Module
This chapter describes configuration and operation of the synchronous/asynchronous
DRAM controller component of the system integration module (SIM). It begins with a
general description and brief glossary, and includes a description of signals involved in
DRAM operations. The remainder of the chapter consists of the two following parts:
11.1 Overview
The DRAM controller module provides glueless integration of DRAM with the ColdFire
product. The key features of the DRAM controller include the following:
• Section 11.3, “Asynchronous Operation,” describes the programming model and
• Section 11.4, “Synchronous Operation,” describes the programming model and
• Support for two independent blocks of DRAM
• Interface to standard synchronous/asynchronous dynamic random access memory
• Programmable SRAS, SCAS, and refresh timing
• Support for page mode
• Support for 8-, 16-, and 32-bit wide DRAM blocks
• Support for synchronous and asynchronous DRAMs, including EDO DRAM,
signal timing for the four basic asynchronous modes.
— Non-page mode
— Burst page mode
— Continuous page mode
— Extended data-out mode
signal timing, as well as the command set required for synchronous operations. This
section also includes extensive examples the designer can follow to better
understand how to configure the DRAM controller for synchronous operations.
(ADRAM/SDRAM) components
SDRAM, and fast page mode
Chapter 11. Synchronous/Asynchronous DRAM Controller Module
11-1

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