HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 431

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HD64F3437TFI16V

Manufacturer Part Number
HD64F3437TFI16V
Description
MCU FLASH 60K 100-TQFP
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HD64F3437TFI16V

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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HD64F3437TFI16V
Manufacturer:
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HD64F3437TFI16V
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19.4.6
Flowchart for Erasing One Block
Address + 1
Erasing Flowchart and Sample Program
No
address
(set bit of block to be erased to 1)
Dummy write to verify address
(flash memory latches address)
(clear bit of erased block to 0)
Write 0 data in all addresses
Clear erase block register
Verify
Select erase-verify mode
Enable watchdog timer
Set top address in block
to be erased (prewrite)
Set erase block register
Disable watchdog timer
(EV bit = 1 in FLMCR)
(E bit = 1 in FLMCR)
Select erase mode
End of block erase
as verify address
OK
Wait (t
Wait (t
*4
Last address?
Wait (x) ms
Clear EV bit
Clear E bit
(read data H'FF?)
n = 1
Start
VS
VS
Figure 19.9 Erasing Flowchart
1) s
2) s
Yes
*5
*5
*5
*1
*2
*3
No go
Erasing ends
Clear EV bit
Erase error
Notes: *1 Program all addresses to be
n
N?
Yes
*5
*2 Set the watchdog timer overflow
*3 For the erase-verify dummy write,
*4 Read the data to be verified with
*5 x:
erased by following the prewrite
flowchart.
interval to the value indicated in
table 19.10.
write H'FF with a byte transfer
instruction.
a byte transfer instruction. When
erasing two or more blocks, clear
the bits of erased blocks in the
erase block registers, so that only
unerased blocks will be erased
again.
t
t
N:
VS
VS
1: 4 s or more
2: 2 s or more
10 ms
3000
No
Erase-verify ends
n + 1
n
399

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