HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 571

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Writer Mode Transition Time: Commands cannot be accepted during the oscillation settling
period or the writer mode setup period. After the writer mode setup time, a transition is made to
memory read mode.
Table 21.21
Item
Standby release (oscillation settling time)
Writer mode setup time
V
Cautions on Memory Programming
1. When programming addresses which have previously been programmed, carry out auto-
2. When performing programming using writer mode on a chip that has been programmed/erased
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Hitachi.
CC
erasing before auto-programming.
in an on-board programming mode, auto-erasing is recommended before carrying out auto-
programming.
hold time
RES
V
CC
2. Auto-programming should be performed once only on the same address block.
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
Figure 21.23 Oscillation Settling Time, Boot Program Transfer Time,
Stipulated Transition Times to Command Wait State
t
osc1
t
bmv
and Power-Down Sequence
Memory
read mode
Command
wait state
Command acceptance
Symbol
t
t
t
osc1
bmv
dwn
Auto-program mode
Auto-erase mode
Min
10
10
0
Max
Command
wait state
Normal/
abnormal
end
identification
Unit
ms
ms
ms
t
dwn
Notes
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