HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 529

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 20.19
Conditions: V
Item
Programming time
Erase time
Number of w r i t ing/ er as ing count
Verify setup time 1
Verify setup time 2
Flash memory read setup
time
Notes: *1 Set the times following the programming/erasing algorithm shown in section 20.
* 4
*2 The programming time is the time during which a byte is programmed or the P bit in the
*3 The erase time is the time during which all 60-kbyte blocks are erased or the E bit in the
*4 After power-on when using an external colck source, after return from standby mode, or
*5 In the LH version, V
*1, * 3
flash memory control register (FLMCR) is set. It does not include the program-verify
time.
flash memory control register (FLMCR) is set . It does not include the prewrite time
before erasure or erase-verify time.
after switching the programming voltage (V
setup time has elapsed before reading flash memory.
When V
when the FV
V
T
AC Characteristics of Flash Memory
a
CC
SS
= –40 C to +85 C (wide-range specifications)
= AV
= 2.7 V to 5.5 V
*1, *2
* 1
* 1
PP
is released, the flash memory read setup time is defined as the period from
SS
PP
= 0 V, V
pin has reached V
CC
= 3.0 V to 5.5 V, AV
*5
PP
Symbol
t
t
N
t
t
t
, AV
P
E
VS1
VS2
FRS
WEC
= 12.0 0.6 V, T
CC
= 2.7 V to 5.5 V
CC
Min
—
—
—
4
2
50
100
+ 2 V until flash memory can be read.
CC
a
PP
Typ
50
1
—
—
—
—
—
= –20 C to +75 C (regular specifications),
= 3.0 V to 5.5 V, AV
) from 12 V to V
*5
, AV
Max
1000
30
100
—
—
—
—
ref
= 2.7 V to AV
CC
Unit
s
Times
s
s
s
s
, make sure that this read
ref
= 3.0 V to AV
Test Conditions
V
V
CC
CC
CC
< 4.5 V
*5
,
4.5 V
CC
.
497