HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 528

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 20.18
Conditions: V
Item
High-voltage
(12 V) threshold
level
FV
Notes: *1 The listed voltages describe the threshold level at which high-voltage application is
496
PP
* 1
current
*2 In the LH version, V
recognized. In boot mode and while flash memory is being programmed or erased, the
applied voltage should be 12.0 V
V
T
DC Characteristics of Flash Memory
a
CC
SS
= –40 C to +85 C (wide-range specifications)
= AV
= 2.7 V to 5.5 V
FV
During read
During
programming
During
erasure
PP
SS
, MD
= 0 V, V
1
CC
= 3.0 V to 5.5 V, AV
*2
Symbol
V
I
PP
PP
, AV
H
= 12.0 0.6 V, T
CC
= 2.7 V to 5.5 V
Min
V
—
—
—
—
0.6 V.
CC
+ 2
CC
a
= –20 C to +75 C (regular specifications),
= 3.0 V to 5.5 V, AV
Typ
—
—
10
20
20
*2
, AV
Max
11.4
10
20
40
40
ref
= 2.7 V to AV
Unit
V
mA
mA
mA
A
ref
= 3.0 V to AV
Test Conditions
V
V
PP
PP
CC
= 2.7 to 5.5 V
= 12.6 V
*2
,
CC
.