HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 526

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

(7) Design a current margin into the programming voltage (V
V
Programming and erasing may become impossible outside this range.
(8) Ensure that peak overshoot does not exceed the rated value at the FV
Connect decoupling capacitors as close to the FV
Also connect decoupling capacitors to the MD
(9) Use the recommended algorithms for programming and erasing flash memory. These
algorithms are designed to program and erase without subjecting the device to voltage stress and
without sacrificing the reliability of programmed data.
Before setting the program (P) or erase (E) bit in the flash memory control register (FLMCR), set
the watchdog timer to ensure that the P or E bit does not remain set for more than the specified
time.
(10) For details on interrupt handling while flash memory is being programmed or erased, see the
notes on NMI interrupt handling in section 20.4.9, Interrupt Handling during Flash Memory
Programming and Erasing.
(11) Cautions on Accessing Flash Memory Control Registers
1. Flash memory control register access state in each operating mode
494
Note: Also connect decoupling capacitors to the MD
PP
The H8/3437F has flash memory control registers located at addresses H'FF80 (FLMCR),
H'FF82 (EBR1), and H'FF83 (EBR2). These registers can only be accessed when 12 V is
applied to the flash memory program power supply pin, FV
will not depart from 12.0 0.6 V (11.4 V to 12.6 V) during programming or erasing.
12 V
12 V
Figure 20.21 V
1.0 F
1.0 F
PP
Power Supply Circuit Design (Example)
0.01 F
0.01 F
1
pin in the same way when boot mode is used.
PP
and MD
1
pin in the same way when boot mode is used.
FV
MD
1
PP
1
pins as possible.
PP
.
PP
) power supply. Ensure that
H8/3437F
PP
and MD
1
pins.