HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 493

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

20.4.6
Flowchart for Erasing One Block
Address + 1
Erasing Flowchart and Sample Program
address
No
(set bit of block to be erased to 1)
Dummy write to verify address
(flash memory latches address)
(clear bit of erased block to 0)
Write 0 data in all addresses
Verify
Clear erase block register
Enable watchdog timer
Select erase-verify mode
to be erased (prewrite)
Set top address in block
Set erase block register
Disable watchdog timer
(EV bit = 1 in FLMCR)
(E bit = 1 in FLMCR)
End of block erase
Select erase mode
as verify address
OK
Wait (t
*4
Wait (t
Last address?
Wait (x) ms
Clear EV bit
Clear E bit
(read data=H'FF?)
n = 1
Start
vs
Figure 20.9 Erasing Flowchart
vs
2) s
1) s
Yes
*5
*6
*6
*1
*2
*3
No go
Erasing
ends
Clear EV bit
Erase error
Notes: *1 Program all addresses to be erased
n
N?
Yes
*6
*2 Set the watchdog timer overflow
*3 For the erase-verify dummy write,
*4 Read the data to be verified with a
*5 The erase time x is successively
*6 t
by following the prewrite flowchart.
interval to the value indicated in
table 20.10.
write H'FF with a byte transfer
instruction.
byte transfer instruction. When
erasing two or more blocks, clear
the bits of erased blocks in the
erase block registers, so that only
unerased blocks will be erased
again.
incremented by the initial set value
erasing, the erase time is fixed. An
initial value of 6.25 ms or less
should be set, and the time for one
erasure should be 50 ms or less.
t
N:
VS
VS
2
1: 4 s or more
2: 2 s or more
n–1
602 (Set N so that total erase
(n = 1, 2, 3, 4). After fourth
No
Erase-verify ends
time does not exceed 30s.)
Double erase time
n + 1
(x
n
2 x)
4?
n
No
Yes
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