HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 524

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: Here, V
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These power-on and power-off timing requirements should also be satisfied in the event of a
power failure and in recovery from a power failure. If these requirements are not satisfied,
overprogramming or overerasing may occur due to program runaway etc., which could cause
memory cells to malfunction.
The V
The threshold level is between approximately V
When this flag is set, it becomes possible to write to the flash memory control register
(FLMCR) and the erase block registers (EBR1 and EBR2), even though the V
not yet have reached the programming voltage range of 12.0 0.6 V.
Do not actually program or erase the flash memory until V
voltage range.
The programming voltage range for programming and erasing flash memory is 12.0 0.6 V
(11.4 V to 12.6 V). Programming and erasing cannot be performed correctly outside this range.
When not programming or erasing the flash memory, ensure that the V
exceed the V
In this chip, the same pin is used for STBY and FV
is made to hardware standby mode. This happens not only in the normal operating modes
(modes 1, 2, and 3), but also when programming the flash memory with a PROM programmer.
When programming with a PROM programmer, therefore, use a programmer which sets this
pin to the V
The P and E bits must be cleared in the flash memory control register (FLMCR)
No program runaway
When applying or releasing V
When V
Application: Raising the voltage from V
Release:
Cutoff:
PP
flag is set and cleared by a threshold decision on the voltage applied to the FV
CC
PP
PP
CC
level when not programming (FV
is applied, program execution must be supervised, e.g. by the watchdog timer.
application, release, and cutoff are defined as follows:
voltage. This will prevent unintended programming and erasing.
Dropping the voltage from 12 0.6 V to V
Halting voltage application (setting the floating state).
PP
, make sure that the P or E bit is not set by mistake.
CC
CC
PP
to 12 0.6 V.
=12 V).
+ 2 V to 11.4 V.
PP
. When this pin is driven low, a transition
PP
CC
has reached the programming
.
PP
voltage does not
PP
voltage may
PP
pin.