HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 563

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Memory Read Mode
1. After completion of auto-program/auto-erase/status read operations, a transition is made to the
2. In memory read mode, command writes can be performed in the same way as in the command
3. Once memory read mode has been entered, consecutive reads can be performed.
4. After powering up, memory read mode is entered.
Table 21.13
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Programming pulse width
WE rise time
WE fall time
Address
Note: Data is latched at the rising edge of WE.
command wait state. When reading memory contents, a transition to memory read mode must
first be made with a command write, after which the memory contents are read.
wait state.
Data
WE
OE
CE
Figure 21.16 Timing Waveforms for Memory Read after Command Write
AC Characteristics in Memory Read Mode
(Conditions: V
t
Command write
ces
t
f
CC
t
t
ds
wep
= 5.0 V 10%, V
Data
t
t
ceh
r
Symbol
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
r
f
t
dh
t
nxtc
SS
Min
20
0
0
50
50
70
= 0 V, T
a
= 25 C 5 C)
Max
30
30
Memory read mode
Address stable
Unit
ns
ns
ns
ns
ns
ns
ns
s
Data
Notes
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